Oxide semiconductor phototransistor improved in visible light absorption rate and manufacturing method thereof
US11393935B2 · kind B2 · utility
0Cited by
0References
6Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 14, 2018 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Aug 23, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present disclosure provides a phototransistor and a manufacturing method therefor, the phototransistor having a defective oxide ray absorption layer introduced to an oxide semiconductor phototransistor through a solution process or a defective oxide ray absorption part introduced to an interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, thereby improving light absorption in the range of a visible light region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.