Photo sensing device and method of fabricating the photo sensing device

US11393939B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chan-Hong Chern · Palo Alto, US
• Weiwei Song · San Jose, US
• Chih-Chang Lin · San Jose, US
• Lan-Chou Cho · Hsinchu, TW
• Min-Hsiang Hsu · Hsinchu, TW

Key dates

• Filing date: Jul 6, 2020
• Grant date: Jul 19, 2022
• Expiry date: Oct 6, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The present disclosure provides a photo sensing device, the photo sensing device includes a substrate, including a silicon layer at a front surface, a photosensitive member extending into and at least partially surrounded by the silicon layer, and a superlattice layer disposed between the photosensitive member and the silicon layer, wherein the superlattice layer includes a first material and a second material different from the first material, a first concentration of the second material at a portion of the superlattice layer proximal to the photosensitive member is greater than a second concentration of the second material at a portion of the superlattice layer distal to the photosensitive member.