Group III nitride LED structures with improved electrical performance
US11393948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2018 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Aug 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Group III nitride light emitting diode (LED) structures with improved electrical performance are disclosed. A Group III nitride LED structure includes one or more n-type layers, one or more p-type layers, and an active region that includes a plurality of sequentially arranged barrier-well units. In certain embodiments, doping profiles of barrier layers of the barrier-well units are configured such that a doping concentration in some barrier-well units is different than a doping concentration in other barrier-well units. In certain embodiments, a doping profile of a particular barrier layer is non-uniform. In addition to active region configurations, the doping profiles and sequence of the n-type layers and p-type layers are configured to provide Group III nitride structures with higher efficiency, lower forward voltages, and improved forward voltage performance at elevated currents and temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.