Patent · US Active

Light emitting element and method of manufacturing same

US11393953B2 · kind B2 · utility

0Cited by
5References
13Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 5, 2020
Grant dateJul 19, 2022
Priority date
Expiry dateOct 7, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0363

Abstract

A light emitting element comprises: a semiconductor layered body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and a dielectric member being in contact with the first semiconductor layer. The first semiconductor layer refractive index with respect to a wavelength of light differs from the light emitting layer refractive index with respect to the wavelength of light. The dielectric member comprises a first dielectric portion and a second dielectric portion. In a second direction that is perpendicular to a first direction that extends from the second semiconductor layer to the first semiconductor layer, a first portion of the first semiconductor layer is positioned between the first dielectric portion and the second dielectric portion. The first dielectric portion comprises the first surface and the second surface. In the first direction, the first surface is positioned between the second surface and the first semiconductor layer. The first surface is inclined relative to the first direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.