Light emitting diode and manufacturing method thereof

US11393955B2 · kind B2 · utility

Assignee

• Genesis Photonics Inc. · TW

Inventors

• Yi-Ru Huang · Tainan, TW
• Kai-Shun Kang · Tainan, TW
• Tung-Lin Chuang · Tainan, TW
• Yu-Chen Kuo · Tainan, TW
• Yan-Ting Lan · Tainan, TW
• Chih-Ming Shen · Hsinchu, TW
• Jing-En Huang · Tainan, TW

Key dates

• Filing date: Dec 6, 2019
• Grant date: Jul 19, 2022
• Expiry date: Jul 6, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/034

Abstract

A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ≤10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.