Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip

US11393967B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Anhe HE · Xiamen, CN
• Suhui Lin · Xiamen, CN
• Jiansen ZHENG · Xiamen, CN
• Kangwei Peng · Xiamen, CN
• Xiaoxiong LIN · Xiamen, CN
• Chenke HSU · Xiamen, CN

Key dates

• Filing date: Dec 30, 2020
• Grant date: Jul 19, 2022
• Expiry date: Dec 30, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/032
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer; a first metal layer arranged on at least part of the first semiconductor layer and in contact with the first semiconductor layer; an insulating layer covered a surface of the light emitting structure; and an electrode layer arranged on the insulating layer and having at least one region that is not overlapped with the first metal layer or the second metal layer in a vertical direction.