Wide band gap power semiconductor system and driving method thereof
US11394372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2020 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Nov 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This application relates to a wide band gap (WBG) power semiconductor system. In one aspect, the system includes a controller configured to generate a switching control signal and a gate driver configured to receive the switching control signal and generate a switching drive signal in response to the switching control signal. The system also includes a WBG power semiconductor device coupled to the gate driver, comprising a gate terminal for receiving the switching drive signal, and configured to be switched in response to the switching drive signal. The switching drive signal has one of three signal levels: a first voltage level higher than a zero voltage level, a second voltage level lower than the zero voltage level, and the zero voltage level at an arbitrary instant. As a result, the gate driver drives the WBG power semiconductor device with the three voltage levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.