Methods of monitoring conditions associated with aging of silicon carbide power MOSFET devices in-situ, related circuits and computer program products
US11397209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2020 |
| Grant date | Jul 26, 2022 |
| Priority date | — |
| Expiry date | Aug 15, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2644
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of monitoring a condition of a SiC MOSFET can include (a) applying a first test gate-source voltage across a gate-source of a SiC MOSFET in-situ, the first test gate-source voltage configured to operate the SiC MOSFET in saturation mode to generate a first drain current in the SiC MOSFET, (b) applying a second test gate-source voltage across the gate-source of the SiC MOSFET in-situ, the second test gate-source voltage configured to operate the SiC MOSFET in fully-on mode to generate a second drain current in the SiC MOSFET, (c) determining a drain-source saturation resistance using the first drain current to provide an indication of a degradation of a gate oxide of the SiC MOSFET; and (d) determining a drain-source on resistance using the second drain current to provide an indication of a degradation of contact resistance of the SiC MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.