Inverter cell structure and forming method thereof

US11398481B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Yan Cai · Stoughton, US
• Yuan Chai · Shanghai, CN
• Kai Hua Hou · Shanghai, CN
• Jian Chen · Shanghai, CN
• Jun Wang · Nanjing, CN

Key dates

• Filing date: May 28, 2020
• Grant date: Jul 26, 2022
• Expiry date: May 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor cell structure and forming method thereof are provided. The semiconductor cell structure includes: a substrate including a first section and third regions on both sides of the first section in a first direction; and a first gate structure group including one or more first gate structures on the substrate. The first section includes a first region and a second region aligned along the first direction in the first section. The first region and the second region are configured to form transistors have a type opposite to a type of transistors configured to be formed in the third regions. The one or more first gate structures extend along the first direction across the first region, the second region, and the third regions on both sides of the first section.