Semiconductor device
US11398557B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2020 |
| Grant date | Jul 26, 2022 |
| Priority date | — |
| Expiry date | Aug 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/311
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a first well, a second well, an isolation structure, a first field plate, a gate structure, a drain structure, and a source structure. The first well and the second well adjoin each other. The first well and the second well are disposed in the substrate. The isolation structure is disposed on the first well. The first field plate is disposed on the isolation structure. The gate structure crosses the first well and the second well, and an opening is defined between the first field plate and the gate structure to expose an edge of the isolation structure adjacent to the gate structure. The drain structure is disposed in the first well. The source structure is disposed in the second well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.