Ferroelectric based transistors

US11398568B2 · kind B2 · utility

Assignee

• GlobalFoundries Dresden Module One Limited Liability Company & Co. KG · DE

Inventors

• Patrick Polakowski · Dresden, DE
• Konrad Seidel · Dresden, DE
• Tarek Ali · Dresden, DE

Key dates

• Filing date: Jun 17, 2020
• Grant date: Jul 26, 2022
• Expiry date: Jun 17, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to ferroelectric based transistors and methods of manufacture. The ferroelectric based transistor includes: a semiconductor-on-insulator substrate including a semiconductor material, a buried insulator layer under the semiconductor material and a substrate material under the semiconductor channel material; a ferroelectric capacitor under the buried insulator layer and which includes a bottom electrode, a top electrode and a ferroelectric material between the bottom electrode and the top electrode; a gate stack over the semiconductor material; a first terminal contact connecting to the bottom electrode of the ferroelectric capacitor; and a second terminal contact connecting to the top electrode of the ferroelectric capacitor.