Back-contact thin film semiconductor device structures and methods for their production
US11398575B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Apr 6, 2018 |
| Grant date | Jul 26, 2022 |
| Priority date | — |
| Expiry date | May 28, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods taught herein provide thin film semiconductor devices such as thin film photovoltaic devices having via holes that enable electrical connection with a bottom surface of a topside contact of the thin film semiconductor device via the back side of the device (e.g., during mounting of the device). In some embodiments, the via holes are electrically insulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.