Interconnects for light emitting diode chips
US11398591B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2020 |
| Grant date | Jul 26, 2022 |
| Priority date | — |
| Expiry date | Aug 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chips with interconnect structures are disclosed. LED chips are provided that include first interconnects electrically coupled to an n-type layer and second interconnects electrically connected to a p-type layer. Configurations of the first and second interconnects are provided that may improve current spreading by reducing localized areas of current crowding within LED chips. Various configurations are disclosed that include collectively formed symmetric patterns of the first and second interconnects, diameters of certain ones of either the first or second interconnects that vary based on their relative positions in LED chips, and spacings of the second interconnects that vary based on their distances from the first interconnects. In this regard, LED chips are disclosed with improved current spreading as well as higher lumen outputs and efficiencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.