Electro-absorption modulator, optical semiconductor device and optical module
US11398713B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Dec 4, 2017 |
| Grant date | Jul 26, 2022 |
| Priority date | — |
| Expiry date | Jun 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-absorption modulator of the invention is an electro-absorption modulator which is formed on an InP substrate and modulate incident light according to a voltage applied to that modulator, and which comprises a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage; wherein the light absorbing layer is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.