Cobalt precursor, method of preparing same and method of manufacturing thin film using same
US11401290B2 · kind B2 · utility
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2References
7Claims
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Key dates
| Filing date | Dec 27, 2018 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Sep 3, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.