Runtime identification of bad memory cells based on difference between data pattern and read data
US11404135B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 17, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Feb 17, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/1208
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Technologies are provided for runtime identification of bad memory cells. An uncorrectable error can be detected in data stored in a plurality of memory cells of a memory device. Patterned data can be written to the plurality of memory cells that stored the data in which the uncorrectable error was detected. The data stored in the plurality of memory cells can be read and compared to the patterned data. One or more of the memory cells can be identified as bad memory cells based on differences between the patterned data and the data read from the plurality of memory cells. In at least some embodiments, the one or more identified bad memory cells can be omitted from subsequent data storage operations. Additionally or alternatively, the one or more identified bad memory cells can be repaired, for example, by using a post-package repair operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.