Semiconductor devices including a support pattern on a lower electrode structure
US11404266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Oct 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.