Method of forming deep trench isolation in radiation sensing substrate and image sensor device
US11404470B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 13, 2019 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Jul 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trench, in which the corrosion resistive layer includes titanium carbon nitride having a chemical formula of TiCxN(2-x), and x is in a range of 0.1 to 0.9; and filling a reflective material in the trench and over the corrosion resistive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.