Charge pump gate drive circuit for reduction in turn-on switching loss for MOSFETs
US11404960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2021 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Jun 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/071
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electronic circuit includes a charge pump circuit, which includes a drive power supply; a flying capacitor; and a pump capacitor that is coupled in parallel to the drive power supply and the flying capacitor in response to a first control signal being in first state and is configured to receive charge from the flying capacitor to boost a pump voltage across the pump capacitor to a value that exceeds a drive voltage provided by the drive power supply responsive to a transition of the first control signal from the first state to a second state. The electronic circuit further includes a gate drive circuit coupled to the charge pump circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.