Pixel structure, image sensor device and system with pixel structure, and method of operating the pixel structure
US11405602B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Dec 10, 2018 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Mar 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.