Process for producing an infrared detector and associated infrared detector
US11408772B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Nov 26, 2019 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Nov 26, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/22
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of manufacturing an infrared detector includes the steps of: hybrid bonding of a detection chip to a second chip; said hybrid bonding step being carried out by adhesion of contacts and of insulator layers of the two chips; removal of a substrate of said detection chip to reach a deep oxide layer; forming of conductive pads through said deep oxide layer to reach transistors present in a semiconductor layer; and forming of microbolometers suspended over said deep oxide layer and electrically connected to the conductive pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.