Semiconductor device and method of manufacturing the same
US11411075B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2021 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Mar 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.