Display device
US11411122B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2020 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Nov 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A display device including: a first thin film transistor (TFT) including a first semiconductor layer and a first gate electrode, the first semiconductor layer including a first channel region, a first source region, and a first drain region; a third TFT including a third semiconductor layer and a third gate electrode, the third semiconductor layer including a third channel region, a third source region, and a third drain region, wherein a leakage current of the third TFT in an off-state is less than a leakage current of the first TFT in an off-state; and a pixel electrode connected to one of the first source region and the first drain region, wherein the one of the first source region and the first drain region is connected to the third TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.