Flip chip type light emitting diode chip
US11411142B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Sep 18, 2020 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Oct 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.