Patent · US Active

Protection layer for a light emitting diode

US11411146B2 · kind B2 · utility

2Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 8, 2020
Grant dateAug 9, 2022
Priority date
Expiry dateJan 9, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/882

Abstract

A particle layer is positioned over a light output surface of a light emitting diode. A transparent protection layer positioned between and in contact with the light output surface and the particle layer. The particle layer comprises a multitude of optically scattering or luminescent particles and a thin coating layer of transparent material coating particles of the multitude. The particles are characterized by a D50 greater than about 1.0 μm and less than about 30. μm; the coating layer has a thickness less than about 0.20 μm. The protection layer is less than about 0.05 μm thick and includes one or more materials different from material of the coating layer. The protection and coating layers can each include one or more metal or semiconductor oxides. Oxide precursor reactivities, with respect to the corresponding light output surface, are less for protection layer material than for coating layer material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.