Conformal organic field-effect transistor, transistor array, and preparation method thereof
US11411190B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2018 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Feb 22, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
A conformal organic field-effect transistor includes an elastic substrate, a gate electrode, a polymer insulating layer, an organic semiconductor layer, and a source electrode and a drain electrode from the bottom up, the source electrode and the drain electrode being embedded in the organic semiconductor layer. A method of forming the conformal organic field-effect transistor includes depositing an organic semiconductor on a substrate surface to form an organic semiconductor layer, the source electrode and the drain electrode are embedded in the organic semiconductor layer; then preparing the polymer insulating layer on a surface of the organic semiconductor layer; transferring the gate electrode from the substrate; forming hydroxyl groups on a metal electrode surface of the gate electrode, a polymer insulating layer surface of the source electrode, and a polymer insulating layer surface of the drain electrode, respectively; and then performing alignment and heating to obtain the conformal organic field-effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.