Patent · US Active

Conformal organic field-effect transistor, transistor array, and preparation method thereof

US11411190B2 · kind B2 · utility

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Key dates

Filing dateNov 28, 2018
Grant dateAug 9, 2022
Priority date
Expiry dateFeb 22, 2039

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/549

Abstract

A conformal organic field-effect transistor includes an elastic substrate, a gate electrode, a polymer insulating layer, an organic semiconductor layer, and a source electrode and a drain electrode from the bottom up, the source electrode and the drain electrode being embedded in the organic semiconductor layer. A method of forming the conformal organic field-effect transistor includes depositing an organic semiconductor on a substrate surface to form an organic semiconductor layer, the source electrode and the drain electrode are embedded in the organic semiconductor layer; then preparing the polymer insulating layer on a surface of the organic semiconductor layer; transferring the gate electrode from the substrate; forming hydroxyl groups on a metal electrode surface of the gate electrode, a polymer insulating layer surface of the source electrode, and a polymer insulating layer surface of the drain electrode, respectively; and then performing alignment and heating to obtain the conformal organic field-effect transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.