Light emitting element and manufacturing method therefor
US11411372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Mar 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/163
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.