Rare earth precursor, method of manufacturing same and method of forming thin film using same
US11414434B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Dec 27, 2018 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Jan 19, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.