Mask blank, phase shift mask, and method for manufacturing semiconductor device
US11415875B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2021 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Apr 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.