Semiconductor photoresist composition, and method of forming patterns using the composition
US11415885B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Sep 29, 2020 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Sep 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.