Memory structure with input-aware maximum multiply-and-accumulate value zone prediction for computing-in-memory applications and operating method thereof
US11416146B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2021 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Jun 29, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2207/4814
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory structure with input-aware maximum multiply-and-accumulate value zone prediction for computing-in-memory applications includes a memory array, an input-aware zone prediction circuit and an analog-to-digital converter. An input-aware maximum partial multiply-and-accumulate value voltage generator is configured to generate a maximum partial multiply-and-accumulate value according to at least one input value. A prediction-aware global reference voltage generator is configured to generate a plurality of global reference voltages, a maximum reference voltage and a selected minimum reference voltage. A maximum partial multiply-and-accumulate value zone detector is configured to generate a zone switch signal by comparing the maximum partial multiply-and-accumulate value and the global reference voltages. The analog-to-digital converter is configured to convert an analog multiply-and-accumulate output value of the memory array to a digital multiply-and-accumulate output value according to the maximum reference voltage, the selected minimum reference voltage and the zone switch signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.