Semiconductor structure and fabrication method thereof

US11417609B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Beijing) Corporation · CN
• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Deng Feng Ji · Shanghai, CN
• Jun Yang · Jingwei, CN
• Hong Liu · 红钢城街道, CN
• You He Sha · Shanghai, CN
• Chen Xiao Wang · Shanghai, CN
• Ying Li · Shanghai, CN

Key dates

• Filing date: Oct 1, 2020
• Grant date: Aug 16, 2022
• Expiry date: Nov 6, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5283
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor structures and fabrication methods are provided. The semiconductor structure includes a semiconductor substrate having a dielectric structure and having at least a first region; a plurality of first openings formed in the dielectric structure in the first region; a first barrier member formed in each of the plurality of the first openings; a plurality of second openings formed between adjacent first barrier members and with sidewall surfaces exposing sidewall surfaces of the first barrier members; and a second barrier member formed in each of the plurality second openings.