Image sensor and method of fabricating the same
US11417699B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2020 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Jul 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8023
Abstract
An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.