Metal-insulator metal structure and method of forming the same

US11417723B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Gwenael Le Rhun · Grenoble, FR
• Christel Dieppedale · Crolles, FR

Key dates

• Filing date: Jun 19, 2019
• Grant date: Aug 16, 2022
• Expiry date: Apr 21, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N30/8554
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.