Method for manufacturing a bipolar transistor and bipolar transistor capable of being obtained by such a method
US11417756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2021 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Feb 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/861
Abstract
A method of making a bipolar transistor includes forming a stack of a first, second, third and fourth insulating layers on a substrate. An opening is formed in the stack to reach the substrate. An epitaxial process forms the collector of the transistor on the substrate and selectively etches an annular opening in the third layer. The intrinsic part of the base is then formed by epitaxy on the collector, with the intrinsic part being separated from the third layer by the annular opening. The junction between the collector and the intrinsic part of the base is surrounded by the second layer. The emitter is formed on the intrinsic part and the third layer is removed. A selective deposition of a semiconductor layer on the second layer and in direct contact with the intrinsic part forms the extrinsic part of the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.