Quantum dot devices with fine-pitched gates

US11417765B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Nicole K. Thomas · Portland, US
• Ravi Pillarisetty · Portland, US
• Kanwaljit Singh · Rotterdam, NL
• Hubert C. George · Portland, US
• David J. Michalak · Portland, US
• Lester Lampert · Portland, US
• Zachary R. Yoscovits · Beaverton, US
• Roman Caudillo · Portland, US
• Jeanette M. Roberts · North Plains, US
• James S. Clarke · Portland, US

Key dates

• Filing date: Jun 25, 2018
• Grant date: Aug 16, 2022
• Expiry date: Dec 14, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/475
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric layer; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric layer, and the second gate dielectric layer extends over the first gate.