Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
US11417788B2 · kind B2 · utility
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Key dates
| Filing date | Nov 19, 2010 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Nov 19, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A type-II tunnel junction is disclosed that includes a p-doped AlGaInAs tunnel layer and a n-doped InP tunnel layer. Solar cells are further disclosed that incorporate the high bandgap type-II tunnel junction between photovoltaic subcells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.