Method of making a light emitting device and light emitting device made thereof
US11417802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2020 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Aug 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
Abstract
A light-emitting device, includes: a semiconductor stack, including a top surface, wherein the top surface includes a first region and a second region which are coplanar; a current barrier layer formed on the first region, wherein the current barrier layer includes an insulating material; and a transparent conductive layer formed on the current barrier layer and the second region; and a first electrode formed on the transparent conductive layer; wherein the current barrier layer includes: an electrode region at a position corresponding to the first electrode, having a shape substantially the same as the first electrode; and a plurality of extension regions extending from the electrode region and not covered by the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.