Apparatus for spin injection enhancement and method of making the same
US11417834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2019 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Jul 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/302
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.