Ceramic substrate and production method for same
US11420905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2017 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Jan 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1131
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention focuses on a silicon nitride substrate having high mechanical strength, high thermal conductivity and the like, and takes advantage of such properties to provide: a ceramic substrate capable of providing improvement in a bonding property between a silicon nitride substrate and a ceramic layer which uses a dielectric ceramic material capable of being simultaneously sintered with a low-resistance conductive material such as a low-melting metal (Ag or Cu); and a method for producing the ceramic substrate. The ceramic substrate of the present invention is obtained by stacking and bonding a silicon nitride substrate and a ceramic layer composed of a dielectric ceramic material, wherein: the dielectric ceramic material contains Mg, Al, and Si as main ingredients, and Bi or B as an accessory ingredient; and the ceramic layer includes a region with a high Si element concentration at a bonding interface with the silicon nitride substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.