Plasma etch-resistant film and a method for its fabrication
US11421319B2 · kind B2 · utility
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1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Dec 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.