Processing for forming single-grain near-field transducer
US11423928B1 · kind B1 · utility
1Cited by
18References
18Claims
0Family size
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Key dates
| Filing date | Jan 18, 2019 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | May 6, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0021
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.