Photolithography of atomic layer resist
US11424135B1 · kind B1 · utility
1Cited by
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16Claims
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Key dates
| Filing date | Feb 23, 2021 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Feb 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of atomic precision advanced manufacturing (APAM), an atomic or molecular resist layer on a substrate surface is selectively depassivated by locally exciting the substrate surface with an optical beam effective to eject adsorbed atoms or molecules from the substrate surface. The substrate surface is further processed by exposing it to a precursor gas, decomposing the precursor gas to release a dopant, and incorporating the dopant into the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.