Ferroelectricity and thermal retention through in situ hydrogen plasma treatment of doped hafnium oxide
US11424271B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Aug 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/423
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various examples are provided related to hydrogen plasma treatment of hafnium oxide. In one example, a method includes depositing a monolayer of a precursor on a first oxide monolayer; forming a second oxide monolayer by applying an oxygen (O2) plasma to the monolayer of the precursor; and creating oxygen vacancies in the second oxide monolayer by applying a hydrogen (H2) plasma to the second oxide monolayer. In another example, a device includes a hafnium oxide (HfO2) based ferroelectric thin film on a first side of a substrate and an electrode layer disposed on the HfO2 based ferroelectric thin film opposite the substrate. The HfO2 film includes a plurality of oxide monolayers including at least one HfO2 monolayer, each of the plurality of oxide monolayers having oxygen vacancies distributed throughout that oxide monolayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.