Electrical connection structure and thin film transistor substrate each having alternating yttrium oxide and silicon oxide films
US11424273B2 · kind B2 · utility
0Cited by
0References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Nov 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrical connection structure includes a substrate, a mating layer on the substrate, a connecting pad on the mating layer, an insulating layer on the mating layer and covering the connecting pad, a connecting line on the insulating layer, and a covering layer on the insulating layer and covering the connecting line. The connecting line extends through the insulating layer to electrically couple to the connecting pad. Both the connecting pad and the connecting line are made of metal or alloy. The mating layer includes yttrium oxide films and silicon oxide films alternating with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.