Light emitting diode integrated with transition metal dichalcogenide transistor and method for manufacturing the same
US11424287B2 · kind B2 · utility
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16Claims
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Assignee
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Key dates
| Filing date | Apr 13, 2021 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | May 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive concept relates to a light emitting diode integrated with a transition metal dichalcogenide-based transistor and capable of simultaneously fabricating the transistor to have a monolithic integration structure. The transition metal dichalcogenide is formed on the light emitting diode device, thereby providing the light emitting diode integrated with the transistor without affecting the characteristics of the light emitting diode device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.