Power semiconductor device for improving hot carrier injection

US11424331B1 · kind B1 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Ming Qiao · Chengdu, CN
• Dingxiang MA · Chengdu, CN
• Zhengkang Wang · Chengdu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Jun 16, 2021
• Grant date: Aug 23, 2022
• Expiry date: Jun 16, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

A power semiconductor device for improving a hot carrier injection is provided. A drain field plate is introduced at one side of a drain in a dielectric trench and connected to a drain electrode, having identical electric potential, thereby improving hole injection effects at a drain side of the dielectric trench. A shield gate field plate is introduced at one side of a source electrode in the dielectric trench and is connected to the source electrode or ground, thereby forming a shield gate. While decreasing gate drain parasitic capacitance Cgd, electron injection effects at a source electrode side of the dielectric trench are improved. With a trench etching method, the improvement of hot carrier injection can also be achieved by making carriers avoid a side wall of the dielectric trench on a path.