Trench MOSFET and method for manufacturing the same
US11424344B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Nov 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a trench MOSFET can include: forming a trench extending from an upper surface of a semiconductor base layer to internal portion of the semiconductor base layer; forming a first insulating layer covering sidewall and bottom surfaces of the trench and the upper surface of the semiconductor base layer; forming a shield conductor filling a lower portion of the trench, where the first insulating layer separates the shield conductor from the semiconductor base layer; forming a second insulating layer covering a top surface of the shield conductor, where the first insulating layer separates the second insulating layer from the semiconductor base layer, and the first and second insulating layers conformally form a dielectric layer; and removing the dielectric layer located on the upper surface of the semiconductor base layer and located on the upper sidewall surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.