Transistor having resistive field plate
US11424356B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | May 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/115
Abstract
A transistor having: a semiconductor; a first electrode in contact with the semiconductor; a second electrode in contact with the semiconductor; and a control electrode, disposed between the first electrode and the second electrode, for controlling a flow of carriers in a channel in the semiconductor between the first electrode and the second electrode. A first electric field is produced in the channel in response to an electrical voltage applied between the first electrode and the second electrode. A field plate, comprising a resistive material, is disposed over the channel. A voltage source is connected across portions of the resistive field plate material for producing second electric field across such portions of the resistor, such second electric field being coupled into the channel to modify one or more peaks of the first electric field in the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.