Semiconductor device structure with high voltage device
US11424359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2021 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Jan 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.